FET

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FET

abbr.
1. federal estate tax
2. federal excise tax
3. field effect transistor
4. frozen embryo transfer

FET

abbreviation for
(Electronics) field-effect transistor
ThesaurusAntonymsRelated WordsSynonymsLegend:
Noun1.FET - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
References in periodicals archive ?
Metamorphic HEMTs have distinct advantages over existing GaAs and InP HEMT technology: the freedom to choose virtually any high In content InGaAs channel provides for application specific device optimization and high frequency performance, while the GaAs manufacturing economies of scale (high volume, large wafer size) reduce the cost.
Cree is pleased to offer these industry leading S-Band GaN HEMT devices for a variety of civilian and military applications, such as air traffic control, weather radar, and homeland defense.
In 2006, Fujitsu and Fujitsu Laboratories developed a GaN HEMT structure with gates of only 0.
From the AlGaN/GaN HEMT cross section, the overall source-drain resistance [R.
The PAE was improved by second harmonic impedance of GaN HEMT with highly accurate input control.
The new GaN HEMT structure was originally developed for wireless transmission amplifiers; however, because the voltage that was applied at the gate electrode in order to switch between on and off states ("turn-on voltage") was in the range of 0.
The Cree GaN HEMT MMIC process features high power density (4-6 watts/mm) transistors, slot vias, and high reliability (up to 225aeC operating channel temperatures), as well as scalable transistors.
The manifold I/O path structure developed for the C-band GaN HEMT that Fujitsu Laboratories developed last year, which avoided phase discrepancies in the input signal, was further optimized for application to the X band (Figure 2).
This result is obtained from the equations Gamma Ll and Gamma Lh, which are calculated from the S parameters extracted from the data set for the unmatched HEMT device via four DATAtoARRAY components in the circuit page; this data set has been named BiasDeviceS.
HEMTs that use GaN have higher power density, which helps save energy and contributes to making transmitters more compact and lightweight, and expanded operating life.
The newly developed three-layer cap structure obviates the need for a negative voltage across the gate electrode and results in a GaN HEMT that allows power to be cut during standby.