Later in the paper a lower power GaAs MESFET
will also be used to demonstrate the accuracy and generality of the modeling approach described.
As seen from Figure 13, the results obtained for the GaN HEMT-based PA are again similar to the ones observed for the GaAs MESFET
and Si BJT.
An additional benefit of this new Class A/B SiC MESFET
process versus our previous Class A process is that the power added efficiency under rated conditions increases from 38% to greater than 44% at P1dB.
GaAs LSI devices and eventually LSI logic circuits, based on either JFET or MESFET
technology, should be capable of operating up to about [10.
The performance advantages of higher power ratings, higher linear efficiency and higher gain, combined with a reduced footprint, offer dramatic advantages when compared to GaAs MESFET
transistors or TWT amplifiers.
In the experiment presented herein, the dependence of the results on the delay factor in IV measurements made using a Keithley 4200 DC parameter analyzer is explored for GaAs MESFET
and Si MOSFET example devices.
The typical standard MESFET
structures for MMIC integration can provide f[Tau]s up to 25GHz with gate lengths of 0.
In addition, because this device operates at higher voltages than GaAs MESFETs
offer greater efficiency, greater power density, and wider bandwidths.
This robust and multi-function E-/D-mode pHEMT process named TQPED is leveraging off of TriQuint foundry's success and wide spread use of the E-/D-mode MESFET
process with the moniker TQTRX.
Both of these GaAs MESFET
MMICs feature 67 and 62 dB of isolation at 1 and 2 GHz, respectively, with a non-reflective topology.
A broad range of circuits in MESFET
, HFET, BJT, HBT, BiCMOS, and CMOS technologies is covered.