The new power MOSFET
provides low power consumption for PC servers, communication base stations and solar power generation systems.
DALLAS, June 7 /PRNewswire/ -- Texas Instruments Incorporated (TI) (NYSE: TXN) today introduced a synchronous MOSFET half bridge that achieves greater than 90 percent efficiency at 25 A - and in half the area of competitive power MOSFET
making it possible to reduce the mounting area by about half compared with previous Renesas Electronics power MOSFET
products, and (2) deliver efficiency of 95.
DualCool(TM) NexFET power MOSFETs
mark the first new power MOSFET
offering from TI since the acquisition.
Renesas Electronics is addressing these demands by expanding its lineup of low-FOM power MOSFET
offerings with its new products that achieve the leading level of performance in the industry today.
2 /PRNewswire/ -- Motorola's Semiconductor Components Group (SCG) today announced the availability of a Low Voltage Surface Mount TMOS(TM) Power MOSFET
Kit which contains information about SCG's extensive line of TMOS Power MOSFETs
necessary for designers to select the right MOSFET for their applications.
Renesas Electronics' new power MOSFET
products were designed specifically to meet the demand for compact, power-dense systems.
The Device's Chip Mounting Area is Half That of an Existing Dual-Package Power MOSFET
Configuration; It Enables Smaller Power Supplies With Higher Efficiencies: up to 91.
These new Polar Power MOSFETs
improve efficiency by significantly reducing typical on-resistance 'Ron' by 20% - a result of IXYS proprietary technology which demonstrates continued technology leadership in the high voltage power MOSFET
Improvements in the fundamental trench cell design continue to bring many technical advantages to the TrenchMV Power MOSFET
MRF6S21060N: An N-channel, enhancement-mode lateral power MOSFET
with output power of 35 dBm, gain of 15.
and will be used in the production of next-generation IGBTs and power MOSFET