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A type of semiconductor field effect transistor used in integrated circuit technology that consumes very little power and can be highly miniaturized.

[m(etal)-o(xide)-s(emiconductor) f(ield)-e(ffect) t(ransistor).]


(Electronics) electronics metal-oxide-silicon field-effect transistor; a type of IGFET
References in periodicals archive ?
The new power MOSFET provides low power consumption for PC servers, communication base stations and solar power generation systems.
DALLAS, June 7 /PRNewswire/ -- Texas Instruments Incorporated (TI) (NYSE: TXN) today introduced a synchronous MOSFET half bridge that achieves greater than 90 percent efficiency at 25 A - and in half the area of competitive power MOSFET devices.
making it possible to reduce the mounting area by about half compared with previous Renesas Electronics power MOSFET products, and (2) deliver efficiency of 95.
Renesas Electronics is addressing these demands by expanding its lineup of low-FOM power MOSFET offerings with its new products that achieve the leading level of performance in the industry today.
2 /PRNewswire/ -- Motorola's Semiconductor Components Group (SCG) today announced the availability of a Low Voltage Surface Mount TMOS(TM) Power MOSFET Kit which contains information about SCG's extensive line of TMOS Power MOSFETs necessary for designers to select the right MOSFET for their applications.
Renesas Electronics' new power MOSFET products were designed specifically to meet the demand for compact, power-dense systems.
The Device's Chip Mounting Area is Half That of an Existing Dual-Package Power MOSFET Configuration; It Enables Smaller Power Supplies With Higher Efficiencies: up to 91.
These new Polar Power MOSFETs improve efficiency by significantly reducing typical on-resistance 'Ron' by 20% - a result of IXYS proprietary technology which demonstrates continued technology leadership in the high voltage power MOSFET market.
Improvements in the fundamental trench cell design continue to bring many technical advantages to the TrenchMV Power MOSFET family.
MRF6S21060N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 15.
and will be used in the production of next-generation IGBTs and power MOSFET ICs.