Printer Friendly
Dictionary, Encyclopedia and Thesaurus - The Free Dictionary
3,918,276,980 visitors served.
forum Join the Word of the Day Mailing List For webmasters
?
Dictionary/
thesaurus
Medical
dictionary
Legal
dictionary
Financial
dictionary
Acronyms
 
Idioms
Encyclopedia
Wikipedia
encyclopedia
?

field-effect transistor
(redirected from Tri-gate transistor)

   Also found in: Encyclopedia, Wikipedia 0.02 sec.
field-ef·fect transistor  (fld-fkt)
n. Abbr. FET
A transistor in which the output current is controlled by a variable electric field.

field-effect transistor
n
(Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate Abbreviation FET See also JFET, IGFET
ThesaurusLegend:  Synonyms Related Words Antonyms
Noun1.field-effect transistor - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification


Want to thank TFD for its existence? Tell a friend about us, add a link to this page, add the site to iGoogle, or visit the webmaster's page for free fun content.
?Page tools
Printer friendly
Cite / link
Feedback
Add definition
Mentioned in?  References in periodicals archive?   Dictionary browser?   Full browser?
 
Intel said that the Tri-Gate transistor moves away from the current "planar" (flat) design, and instead is designed using a three-dimensional architecture, which increases the surface area of the transistor gate, thus increasing performance and enabling higher speed processors.
Bohr described several options that Intel is researching for future technology generations, including tri-gate transistors, Indium Antimonide quantum well transistors and carbon nanotube interconnects.
Intel has successfully integrated three key elements -- tri-gate transistor geometry, high-k gate dielectrics, and strained silicon technology -- to once again produce record transistor capabilities.
 
 
 
Dictionary, Thesaurus, and Translations
?

Terms of Use | Privacy policy | Feedback | Advertise with Us | Copyright © 2012 Farlex, Inc.
Disclaimer
All content on this website, including dictionary, thesaurus, literature, geography, and other reference data is for informational purposes only. This information should not be considered complete, up to date, and is not intended to be used in place of a visit, consultation, or advice of a legal, medical, or any other professional.