SEM investigations of the samples revealed that increasing
dopant concentration of V increased the grain size little .
The decrease in crystallite size occurs through defects generated by the substitution of the network modifier ([Zn.sup.2+]) by the
dopant ([Eu.sup.3+] or [Pr.sup.3+]), generating distortions in the crystalline lattice [19], which consequently contributes to technological applications.
In addition, the nanocomposites were doped with a binary
dopant system to retain their electrical conductivity for longer period.
Recently, we reported a YAG transparent ceramics using divalent
dopants (CaO and MgO) as sintering aids and found that CaO
dopant was more effective in the suppression of grain growth than MgO.
It uses a controlled atmosphere, and adds small quantities of
dopant gas for grafting, and
dopant monomers for nano coating.
Uneven NiSi/Si interface [14] and random
dopant fluctuation (RDF) [15, 16] can also fluctuate the contact resistivity and thus induce the DC performance variations.
[40] showed that there is a synergistic effect of N
dopant and oxygen vacancy in Ti[O.sub.2] contributing to the significant enhancement of the visible light photoactivity.
By carefully choosing the type and amount of
dopant, researchers can alter semiconductors' electronic structure and electrical behavior in a variety of ways.
The electrical resistivity has been found to decrease with the increase in the
dopant concentration.
This process increases thermal budget, which may result in a reduced surface
dopant concentration, increased diffusion depth of preformed doping region, and reduced excess carrier lifetime due to thermal degradation.
Scanning capacitance microscopy (SCM) is one of the most commonly used techniques for
dopant profiling in the semiconductor industry [1-4].