p-n junction

(Electronics) electronics a boundary between a p-type and n-type semiconductor that functions as a rectifier and is used in diodes and junction transistors

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Noun

p-n junction - the junction between a p-type semiconductor and an n-type semiconductor; "a p-n junction has marked rectifying characteristics"

tangency, contact - (electronics) a junction where things (as two electrical conductors) touch or are in physical contact; "they forget to solder the contacts"

References in periodicals archive

Among that, silicon nanowires (SiNWs) core-shell solar cells with a p-n junction were reported as promising solutions for energy efficient conversion.

Two-Dimensional Modeling of Silicon Nanowires Radial Core-Shell Solar Cells

Design and Experimental Results of Physically Contacted p-n Junction. For preparing p-n junction p- and n-type sliced gels were superimposed and a small force was applied on the metal electrode softly to stick the gels together.

Synthesis of polyacrylamide hydrogels as p-n-junction with ionic charge carriers

This phenomenon takes place when the LED chip is powered, forward bias takes place at the p-n junction of the LED chip.

Cylindrical shape slug heat conduction numerical analysis using copper material

The p-n junction is still the basic building block of many semiconductor devices.

The new equations of p-n junction carrier injection level

P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.

IMPLANTED P-N DIODES IN Si/Ge

The process creates a boundary called a p-n junction inside the device.

Connect the Dots

where S is the effective area of TEG (here, it is 6.25 [mm.sup.2]), a is the base side length of TE prism, and d is the spacing between p-type prism and n-type prism of a TE p-n junction, as shown in Figure 3.

Equivalent circuit analysis of photovoltaic-thermoelectric hybrid device with different TE module structure

To create a p-n junction diode, the researchers work with materials at 55,000 times atmospheric pressure and at temperatures close to 1,700|C.

Putting the heat on new semiconductors

Previously, the photovoltaic effect was reported in the perovskite-based p-n junctions, thin films, and single crystals [1-6].

Picosecond photovoltaic response in tilted lanthanum doped manganite films