MOSFET

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MOS·FET

 (mŏs′fĕt′)
n.
A type of semiconductor field effect transistor used in integrated circuit technology that consumes very little power and can be highly miniaturized.

[m(etal)-o(xide)-s(emiconductor) f(ield)-e(ffect) t(ransistor).]
American Heritage® Dictionary of the English Language, Fifth Edition. Copyright © 2016 by Houghton Mifflin Harcourt Publishing Company. Published by Houghton Mifflin Harcourt Publishing Company. All rights reserved.

MOSFET

(ˈmɒsfɛt)
n
(Electronics) electronics metal-oxide-silicon field-effect transistor; a type of IGFET
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
References in periodicals archive
Release date- 29072019 - The STMicroelectronics VIPer26K high-voltage converter integrates a 1050V avalanche-rugged N-channel power MOSFET that enables offline power supplies to combine a wide input-voltage range with the advantages of a simplified design.
Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET, IGBT, IPM, TVS, HVIC, GaN/SiC, Power IC and Digital Power products.
Summary: Market Research Reports Search Engine (MRRSE)'s latest study on the global market for power MOSFET discusses such factors and draws a forecast based on an in-depth analysis.
[USPRwire, Tue Feb 26 2019] Looking at the current market trends as well as the promising demand status of the Power MOSFET Market , it can be projected that the future years will bring out positive outcomes.
Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a range of power semiconductors, including a wide portfolio of Power MOSFET, IGBT, IPM, HVIC, Power IC and Digital Power products.
EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
In Section II, a high voltage power MOSFET is designed as an array of parallel connected unit cells in a partial SOI process.
GWS has been awarded 22 patents related to lateral low voltage power MOSFET technology.
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