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field effect transistor

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field effect transistor
A type of transistor, usually made of semiconductors, in which the flow of current from a source on one side to a drain on the other is regulated by the strength of an electric field. This field is produced by a voltage at a third point called the gate, which effectively squeezes or opens the channel to the flow of current. Field effect transistors are especially useful for amplifying or switching very low power signals, as found in portable wireless technology, microprocessors, and digital memory circuits. Compare bipolar transistor.


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Karris covers basic electronic concepts and signals, semiconductor electronics, diodes, bipolar junction transistors, field effect transistors and PNPN devices, operational amplifiers, integrated circuits, pulse circuits and waveforms generators, frequency characteristics of single-stage and cascaded amplifiers, tuned amplifiers, sinusoidal oscillators, compensated attenuators, and more.
Tokyo, Japan, Sept 12, 2005 - (JCN Newswire) - Toshiba Corporation (TSE: 6502) today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications.
It is possible now to interface individual neurons with silicon microstructures in both directions," they say, "from silicon to neuron, by stimulation of a [membrane] spot, and from neuron to silicon, using a metalfree field effect transistor.
 
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