The physical properties in question are electric resistivity, magnetoresistance
, thermopower and thermal conductivity.
in layered magnetic structures with antiferromagnetic interlayer exchange.
The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance
of [approximately equal to]300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.
The anisotropic magnetoresistance
(AMR) and the giant magnetoresistance
The selections that make up the text cover the fundamentals of magnetoresistance
effects, spin current, spin hall effect and inverse spin hall effect, spin pumping, spin conversion at magnetic interfaces, and several other related subjects.
These ferromagnetic properties could open up the possibility of producing highly tunable graphene-based applications devices, including spintronic nanodevices, magnetoresistance
, and magnetic memory devices.
In theory, the larger the air-gap is, the greater the magnetoresistance
The recent prediction and experimental realization of standard type-I Weyl fermions in semimetals by two groups in Princeton and one group in IOP Beijing showed that the resistivity can actually decrease if the electric field is applied in the same direction as the magnetic field, an effect called negative longitudinal magnetoresistance
Mahesh, "Giant magnetoresistance
in manganese oxides," Current Opinion in Solid State and Materials Science, vol.
Nevertheless, magnetic particles could in the future be detected directly using a magnetometer or via giant magnetoresistance
In sections on magnetics, actuators, sensors, and sensors he explains such aspects as basic electromagnetics, the reluctance method, magnetic force, magnetic actuators operated in turn by direct and alternative current, the Hall effect and magnetoresistance
sensors, coil design and temperature calculations, electromechanical finite elements, and coupled electrohydraulic analysis using systems models.
Because of its 3D Dirac fermions in the bulk, a 3DTDS also features intriguing non-saturating linear magnetoresistance
that can be orders of magnitude higher than the materials now used in hard drives, and it opens the door to more efficient optical sensors.