textures, bastites, and fracture fillings are distinguished.
induced high electron mobility transistor (pHEMT) has been used for our design.
The SKY67159-396LF single-stage gallium arsenide (GaAs) pseudomorphic
high-electron-mobility transistor (pHEMT) LNA available in a compact 2mm x 2mm x 0.
Not readymades (though not not readymades), not post-Internet (though not not post-Internet), not 3-D printing (though not not it, either), but something, indeed, like iodine poisoning--a disease that covers its tracks, a pseudomorphic
disorder that generalizes its paranoia, infusing new discourses with old technologies and vice versa.
Brennan, Theoretical analysis of an AlGaAs/InGaAs pseudomorphic
HEMT using an ensemble Monte Carlo simulation", IEEE Tran.
2 GHz single-die cascode, gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT) low-noise amplifier (LNA) for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters, and base stations.
Karlsson, "A W-band subharmonically pumped resistive mixer based on pseudomorphic
heterostructure field effect transistor technology," IEEE MTT-S Symp.
This mixer was fabricated using a low-noise gallium arsenide pseudomorphic
high electron mobility transistor (GaAs PHEMT) process on a 78 [micro]m thick GaAs substrate from Transcom Inc.
Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has announced the company has added its world-class Gallium Arsenide (GaAs) technology to RFMD's foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic
High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.
Dull black but of excellent dendritic form, the pseudomorphic
"trees" range from thumbnail to small-cabinet size, and some have sharp cubes of acanthite and/or skutterudite reposing on them.
The CDQ0303-QS dual amplifier uses GaAs pseudomorphic
high electron mobility transistor (PHEMT) device technology and is designed to cover the 500 to 6000 MHz frequency bands.
As the original and/or recrystallized pseudomorphic
structures have preserved without further dissolution, it can be expected that the fossilization has been a rapid, almost instant process.