CMOS

(redirected from Complementary Metal Oxide Semiconductor)
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CMOS

abbr.
complementary metal oxide semiconductor
American Heritage® Dictionary of the English Language, Fifth Edition. Copyright © 2016 by Houghton Mifflin Harcourt Publishing Company. Published by Houghton Mifflin Harcourt Publishing Company. All rights reserved.

CMOS

(ˈsiːmɒs)
acronym for
(Computer Science) complementary metal oxide silicon: CMOS memory.
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
References in periodicals archive ?
This technology is used in the Micro ScoutCam portfolio of products, and includes a range of video cameras with small diameter heads that use complementary metal oxide semiconductor or charge coupled device based sensors.
Patil, Ph.D., from the University of Glasgow in the United Kingdom, and colleagues reported the development of a handheld device based on complementary metal oxide semiconductor technology.
Financial terms of the deal were not disclosed.<br />Finger Lakes Instrumentation designs, develops and produces low-noise, cooled charge coupled devices (CCD) and high-speed, high-sensitivity cooled scientific complementary metal oxide semiconductor (CMOS) cameras for the astronomy and life science markets.
While the market size of complementary metal oxide semiconductor (CMOS) image sensors has continuously been increasing and is expected to grow further, industry watchers said Samsung Electronics is challenging industry leader Sony.
The new facility, which Kyocera plans to open in August 2019, will bring a 25 percent increase in the company's total production capacity for ceramic packages used to house SMD*1 (surface-mount device) electronic devices and CMOS*2 (complementary metal oxide semiconductor) image sensors.
Broadcom Limited designs, develops and supplies a range of complex digital and mixed signal complementary metal oxide semiconductor based devices and analog III-V based products worldwide.
These include the charge coupled device (CCD), the pinned photodiode (PPD) and the complementary metal oxide semiconductor (CMOS) image sensor.
Circuit design contributions include: an analytical model of subthreshold behavior, dominant on standby, of metal oxide semiconductor field effect transistors (MOSFETs) with a silicon or germanium junctionless cylindrical gate; spin lifetime enhancement and manipulation in silicon-on-insulator structures; an energy efficient 12-bit, 1-MS/s successive approximation register analog-to-digital converter (SAR ADC) for sensor applications using a hybrid charge and complementary metal oxide semiconductor (CMOS) technology; and an architecture of 5.2/5.8 GHz dual band on-off keying (DBOOK) modulated transmitter in CMOS technology for bio-signal transmission with high power efficiency and small area, and impact-based area allocation for yield optimization in integrated circuits.
is a holding company, owning subsidiaries that manufacture and market electronic components and other related products, such as complementary metal oxide semiconductor camera modules.
Depending on the technology, market is segmented into Complementary Metal Oxide Semiconductor (CMOS) and Charge Coupled Device (CCD).
Global-Tech Advanced Innovations is a holding company, owning subsidiaries that manufacture and market electronic components and other related products, such as complementary metal oxide semiconductor (CMOS) camera modules (CCMs).
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