depletion layer

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depletion layer

n
(Electronics) electronics a region at the interface between dissimilar zones of conductivity in a semiconductor, in which there are few charge carriers
References in periodicals archive ?
The extension of the Schottky junction depletion region in the channel measured from the surface under illumination is given by [11]
The device exhibits negative temperature coefficient for breakdown voltage which can be attributed to the reduction of a depletion region due to generation of charge carriers.
2) For the second research objective, firstly, we propose to increase electron mobility by incorporating semi-conductive materials, possessing higher electron mobility and lower-lying conduction band (CB) than CQD, into CQD film; secondly, we propose to enlarge the depletion region width by incorporating ferroelectric (FE) material between active layer and anode as interfacial layer.
p]) are hole and electron (minority carrier) boundary concentrations at the edges of the depletion region x=[x.
By simply applying a tuning voltage bias, a depletion region with varied conductivity will be formed near the gap of the absorption structures to affect the strength of the resonance, and then different absorption of the incident wave can be effectively obtained.
The bias is applied as a DC voltage sweep that drives the MOSCAP structure from its accumulation region into the depletion region and then into inversion (Figure 2).
These results clearly show that the "deeper" one goes into the depletion region, the worse (i.
At the core of a FET is a positively charged depletion region under the gate electrode that restricts the current passing between the source and drain electrodes.
Assuming that this deviation was due to the presence of charged deep-level recombination centers in the depletion region and of opposite polarity from the regular space charge, a value for deep-level states were calculated as 1.
Fully depleted means that the top silicon is thinner (50nm or less) than the depletion width beneath the channel and the depletion region extends to the buried oxide.
If there is an electronic confinement, the model for describing the conduction band of the semiconductor in the ALD-FET system is described by the depletion region approach in the proximity of the metal-semiconductor contact [30],