When pressure is increased [E.sub.F] increases whereas no density of states is available at the Fermi level
up to metallization pressure.
For the bulk anatase, C introduces occupied states above the original VB, so the Fermi level
is located at the end of these states.
is a critical parameter for understanding transport electronic properties, like resistivity, mobility, and so on.
The Fermi level
is chosen to be zero of the energy scale.
The activation energy [E.sub.a] can be deduced through Arrhenius plots by the slope of the linear fit, which is related to the energy difference between the Fermi level
and the top of valance band in p-type semiconductor .
The Fermi level
(Ef) moves to lower energy regions obviously.
To investigate the influence of breath gases on the electricity of intrinsic SWCNTs and Ni-SWCNTs, the total densities of stated (TDOS) and the partial DOS (PDOS) of gas adsorbed structures are calculated by DFT-PBE method with the Fermi level
aligning at zero as depicted in Figures 3-6.
Especially around the Fermi level
, the 5f orbital's partial density of state is dominant; the s and the p orbitals contribute only with a small part of the total density of state.
He covers critical indices of the metal-insulator transition, different types of hopping conductivity including nearest-neighbor hopping and variable-range hopping with and without the existence of a soft Coulomb gap at the Fermi level
, hopping spectroscopy, nontrivial effects such as negative magneto-resistance and electron-electron interaction-assisted hopping, 1/f noise and electronic devices based on hopping conduction, and inter-impurity radiative recombination and hopping photoconductivity.
It is clear that there are two obvious narrow DOS peaks labeled with A and B of N-doped lead at 0.2 and 0.3 eV from the Fermi level
(EF), which is located inside the band gap of undoped AGNRs.