field-effect transistor

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field-effect transistor

n
(Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate. Abbreviation: FET See also JFET, IGFET
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Noun1.field-effect transistor - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
References in periodicals archive ?
Among his topics are material properties, ideal specific on-resistance, junction field effect transistors, silicon carbide planar power metal-oxide-semiconductor field-effect-transistors, silicon carbide bipolar junction transistors, and silicon carbide gate turn-off thyristors.
Single-crystalline CdTe nanowire field effect transistors as nanowirebased photodetector.
In case tubes with very small diameters and appropriate length can be produced, it is possible to produce field effect transistors with floating gate that can be controlled from inside.
The tunneling field effect transistors have not yet demonstrated a sufficiently large drive current to make it a practical replacement for current transistor technology," Rommel asserted, "but this work conclusively established the largest tunneling current ever experimentally demonstrated, answering a key question about the viability of tunneling field effect transistor technology.
Metal Oxide Semiconductor Field Effect Transistors (MOS- FETs) offer the compelling advantage that they draw almost zero control current while idle.
In this case mathematical models are created implementing three-dimensional field effect transistors (MOS and V-MOS) [3, 7, 9] and assessing the adequate selection of the three-dimensional integrated element in the three-dimensional integrated circuits (Fig.
RF and microwave modeling and measurement techniques for compound field effect transistors.
The core intellectual property involves a wide range of applications in nanotechnology, nanomaterials and the use of nanotube and nanowire-based field effect transistors (FETs) as biosensors.
Karris covers basic electronic concepts and signals, semiconductor electronics, diodes, bipolar junction transistors, field effect transistors and PNPN devices, operational amplifiers, integrated circuits, pulse circuits and waveforms generators, frequency characteristics of single-stage and cascaded amplifiers, tuned amplifiers, sinusoidal oscillators, compensated attenuators, and more.
To be built at a cost of 10 billion yen ($89 mil), the new line will produce driver ICs for LCDs and power metal-oxide semiconductor field effect transistors (MOSFETs).
The model ATF-52189 and model ATF-53189 are high linearity enhancement-mode pseudomorphic high electron-mobility transistor (ePHEMT) field effect transistors (FET).
A range of applications is foreseen for organic field effect transistors and organic light emitting diodes including, for instance, flexible displays and other low-cost flexible electronics.

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