bipolar transistor

(redirected from IGBT)
Also found in: Acronyms, Encyclopedia.
Related to IGBT: MOSFET, TRIAC

bipolar transistor

n.
A type of transistor used to amplify or switch electrical signals and consisting of three semiconductor layers treated so that the layer in the middle has an inherent electric charge opposite to the charge of the layers on either side of it. Signals applied to the middle layer control the strength of current flow between the outside layers.
American Heritage® Dictionary of the English Language, Fifth Edition. Copyright © 2016 by Houghton Mifflin Harcourt Publishing Company. Published by Houghton Mifflin Harcourt Publishing Company. All rights reserved.
Mentioned in ?
References in periodicals archive ?
IGBT modules are mounted on industrial equipment such as inverters for driving motors, uninterruptible power supplies (UPSs), and power conditioning systems for wind or photovoltaic power generation facilities (PCS), and are key devices in achieving both energy conservation and a stable electric power supply.
threatening to impose heavy tariffs on Mexico over illegal immigrants, and the unstable Middle East situation, could impact sales of electric cars in the second half of 2019 and drag down IGBT output.
ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, will be launching and exhibiting a new silicon-carbide (SiC) based hybrid IGBT and associated isolated high current IGBT gate driver, the company said.
Resonant stage (Stage C): The current of the IGBT [S.sub.2] is reached zero, which represents the soft-turn-off and at the same time the resonant current of [I.sub.Lr] is at the peak that equals to the input current of L.
The company's IGBT cooling technology was developed to meet the high-performance thermal requirements of today's electric and hybrid vehicles.
The authors based on the analysis of the power electronics elements characteristics came to the conclusion that it is expedient to use powerful IGBT transistors in the output stages.
The work proposed in this paper addresses an open-circuit fault detection of an IGBT switch of an inverter controlled by a DSPACE 1104 card based on the SVM control strategy feeding an induction motor.
In addition to the products developed and sold for power devices, ULVAC developed and launches sales of two types of ion implanters for IGBT.
This paper focuses on improving the IGBT turn-off switching performance.
By substituting (10) in (8) and (9) and by replacing the summations with the integrals, the average current in Si IGBT is calculated as