JFET


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Related to JFET: MOSFET, Bjt

JFET

(ˈdʒeɪfɛt)
n acronym for
(Electronics) junction field-effect transistor; a type of field-effect transistor in which the semiconductor gate region or regions form one or more p-n junctions with the conduction channel. Compare IGFET
References in periodicals archive ?
The "UnitedSiC Cascode JFET 650V Family" report has been added to ResearchAndMarkets.com's offering.
Since no feedback to the gates of the JFETs is allowed, a cascode arrangement of the input stage is used that keeps the voltage at the JFET drain constant and thus prevents feedback via the drain-gate capacitance [54, 55].
A photocurrent gain of 9.8 was attained in a photo JFET with a colloidal quantum dot absorber channel layer at 450 nm wavelength at 0.4 [micro]W optical power at a bias of 30 V [6].
"Design of 1.7 to 14 kV normally-Off trenched and implanted vertical JFET in 4H-SiC," Mater.
In addition, the optimized high-energy phosphor implantation through the field oxide of depletion channel is employed to reduce onresistance near JFET region.
Specific experiments supported by the CIB like a Silicon Carbide Junction Field Effect Transistor (SiC JFET) health monitoring and a solar cell health monitoring will be discussed.
Before exercise, all the electrodes were connected to a miniature source following multi-channel JFET headstage which was mounted on the animal's head so as to reduce the movement artifacts.
Next, we use the established model to investigate output characteristics of a JFET amplifier circuit subjected to external incident field.
The unit cell is enclosed by red dashed lines, which includes the type TDK EL0405 inductors [L.sub.g], [L.sub.d]; TDK FK24C0G1 capacitors [C.sub.gd], [C.sub.gs]; Toshiba 1SV101 varactor; and Toshiba 2SK30A JFET. The typical threshold voltage [V.sub.th] of 2SK30A JFET is -1.5 V.
Inherently Safe DC-DC Converter Using a Normally-On SiC JFET. In Proc.
The work is divided into sections covering circuits, systems and microelectric systems, and individual chapters address such topics as MOSFET and JFET amplifiers, power supplies, logical circuits, basic telecommunications systems, process control systems and microelectric programming.
As a general rule, JFET gate leakage current doubles for every 10[degrees]C increase in temperature, but most electrometers are temperature compensated to minimize input current variations over a wide temperature range.