FET

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FET

abbr.
1. federal estate tax
2. federal excise tax
3. field effect transistor
4. frozen embryo transfer

FET

abbreviation for
(Electronics) field-effect transistor
ThesaurusAntonymsRelated WordsSynonymsLegend:
Noun1.FET - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
References in periodicals archive ?
In later stages, replacement of the GaAs pHEMT with an InP pHEMT [48] is planned to increase the amplifier's gain (it is reported that InP pseudomorphic designs have electron mobilities significantly higher than their GaAs counterparts [32]) and reduce the system noise temperatures further.
H Morkner, et.al., "A High Performance 1.5 dB Low Noise GaAs PHEMT MMIC Amplifier for Low Cost 1.5-8 GHz Commercial Applications," in 1993 IEEE MMMCS Dig., pp.
The basic structure of AlGaN/ GaN pHEMT [12] is as shown in Figure 1.
The discrepancy may mainly attribute to the pHEMT gate reflow process to deviate the Schottky diode nonlinear large signal model.
Specifically, RFMD will make available three distinct GaAs pHEMT technologies optimized for high power, low noise and RF switching products.
With GaAs HBT and pHEMT devices continuing to play a pivotal role in cellular radio terminals and a broad range of other markets, Strategy Analytics has projected that the epitaxial substrate suppliers market will grow in material output through 2014.
The MML09211H is an enhancement-mode pHEMT MMIC low-noise amplifier ideal for applications ranging from W-CDMA base stations in the 865 a[euro]" 960 MHz band to the high-datarate networks currently being implemented in the 728 - 768 MHz band while the MMA20312B is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells.
Who Knew: "This will actually increase the number of HBT and pHEMT die going into increasingly complex RF front-end module solutions."
Here the major process stream is PHEMT, which is used for manufacturing discrete transistors, complex multi-function MMICs, high IM switches and high power amplifiers.
It will supply "tens of millions of "pHEMT GaAs" modules to RF Micro Devices, a supplier of radio frequency circuits to industry giants Nokia and Samsung.
(AWR(TM)) and WIN Semiconductors Corporation (WIN) have introduced a process design kit (PDK) supporting WIN's power pseudomorphic High Electron Mobility Transistor (pHEMT) gallium arsenide (GaAs) foundry process.
TRW is also developing millimeter-wave low-noise amplifier and millimeter-wave oscillator chips using PHEMT technology that can be inserted into the ALR-67 ASR Millimeter-Wave Receiver (MMWR).