In later stages, replacement of the GaAs pHEMT
with an InP pHEMT
 is planned to increase the amplifier's gain (it is reported that InP pseudomorphic designs have electron mobilities significantly higher than their GaAs counterparts ) and reduce the system noise temperatures further.
H Morkner, et.al., "A High Performance 1.5 dB Low Noise GaAs PHEMT
MMIC Amplifier for Low Cost 1.5-8 GHz Commercial Applications," in 1993 IEEE MMMCS Dig., pp.
The basic structure of AlGaN/ GaN pHEMT
 is as shown in Figure 1.
The discrepancy may mainly attribute to the pHEMT
gate reflow process to deviate the Schottky diode nonlinear large signal model.
Specifically, RFMD will make available three distinct GaAs pHEMT
technologies optimized for high power, low noise and RF switching products.
With GaAs HBT and pHEMT
devices continuing to play a pivotal role in cellular radio terminals and a broad range of other markets, Strategy Analytics has projected that the epitaxial substrate suppliers market will grow in material output through 2014.
The MML09211H is an enhancement-mode pHEMT
MMIC low-noise amplifier ideal for applications ranging from W-CDMA base stations in the 865 a[euro]" 960 MHz band to the high-datarate networks currently being implemented in the 728 - 768 MHz band while the MMA20312B is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells.
Who Knew: "This will actually increase the number of HBT and pHEMT
die going into increasingly complex RF front-end module solutions."
Here the major process stream is PHEMT
, which is used for manufacturing discrete transistors, complex multi-function MMICs, high IM switches and high power amplifiers.
It will supply "tens of millions of "pHEMT
GaAs" modules to RF Micro Devices, a supplier of radio frequency circuits to industry giants Nokia and Samsung.
(AWR(TM)) and WIN Semiconductors Corporation (WIN) have introduced a process design kit (PDK) supporting WIN's power pseudomorphic High Electron Mobility Transistor (pHEMT
) gallium arsenide (GaAs) foundry process.
TRW is also developing millimeter-wave low-noise amplifier and millimeter-wave oscillator chips using PHEMT
technology that can be inserted into the ALR-67 ASR Millimeter-Wave Receiver (MMWR).