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A type of semiconductor field effect transistor used in integrated circuit technology that consumes very little power and can be highly miniaturized.

[m(etal)-o(xide)-s(emiconductor) f(ield)-e(ffect) t(ransistor).]


(Electronics) electronics metal-oxide-silicon field-effect transistor; a type of IGFET
References in periodicals archive ?
m], NMOS phase shifter gives inverting all-pass function and the PMOS one produces non-inverting all-pass output.
3) While N input is taken at high logic level and P input is at low logic level, the diodes between NMOS and PMOS bulks to Out are directly polarized and there is a short between N and P, resulting in static power dissipation.
Are coupled with an external PMOS disconnect switch.
As a world's first, Fujitsu Laboratories developed new technology for 32nm-generation LSIs that can be used with existing 45nm-generation fabrication facilities using a (110) silicon substrate to enable increase in PMOS on-current, with no drop in NMOS on-current, in comparison with a (001) surface.
However, the PMOS 1/f noise is usually lower than for the NMOS by one order of magnitude.
Power gating uses low-leakage PMOS transistors as header switches to shut off power supplies to parts of a design in standby.
MILPER Message 14-083, issued 26 March 2014, outlines administrative guidelines regarding identification, promotion, reclassification, and separation requirements for PMOS 35P Soldiers who fail to attain or to maintain a Defense Language Proficiency Test (DLPT) score of 2/2/1+ or higher.
A single-ended RVCO topology comprises of inverters and each inverter is made up of an NMOS and PMOS transistors.
In sections on fundamentals, non-crystalline semiconductors, and thin film transistor circuits and applications, he discusses such topics as resistor-capacitor circuits, modeling threshold voltage shift for circuit design, a transistor as a switch, compensation circuits for displays, and a case study of a pseudo PMOS field effect transistor.
With metal gate electrodes for 32nm-generation logic LSIs, to achieve on-current equivalent to that of previous levels even while using low voltage, NMOS and PMOS devices must have different metal materials for their gate electrode, thus leading to a rise in costs due to the necessitation of new materials and the need for additional manufacturing processes.
The LVCE161284 also offers I-off and Power-Up 3-State to support Hot Insertion, an integrated PMOS transistor to prevent back-drive current, hysteresis at all inputs to provide noise margin and an Auto-Power-Up feature that prevents printer errors when the printer is turned on and when no valid signal is at connector side pins.
uk, you'll find plenty of references to the PMOS, but no names.