FET

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FET

abbr.
1. federal estate tax
2. federal excise tax
3. field effect transistor
4. frozen embryo transfer

FET

abbreviation for
(Electronics) field-effect transistor
ThesaurusAntonymsRelated WordsSynonymsLegend:
Noun1.FET - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
References in periodicals archive ?
Compared to the second generation, the device capacitances of the Infineon third generation SiC Schottky diodes are about 40 percent lower, which reduces switching losses.
The series is made up of low power/low-noise integrated Schottky diode termination networks consisting of 36 Schottky diodes integrated into a single package.
A series of 1W Zener devices, and a series of 2A, low-voltage Schottky rectifiers, have been developed using this company's PowerDI 123 Compact Power Package, featuring a footprint of just 6.75 [mm.sup.2], and a height of 1 mm.
The MA4IQP900L-1291T and the MA4IQP900H-1291T HMIC I-Q modulators/demodulators are compact and highly functional devices using low and high barrier silicon Schottky diodes, respectively, and compliment the existing MA4IQP900M-1291T medium barrier silicon device.
Tenders are invited for: development of 4.7 thz schottky device and mixer
Meanwhile, dopant-segregated SOI MOSFETs have been considered as one of the promising candidates due to their several advantages over the planar bulk MOSFETs: low Schottky barrier height (SBH) at the silicide/semiconductor interface, possibility of low-temperature process, and near-abrupt junction formation [5-9].
Similarly, random access memory devices have been presented by modulation of the Schottky barrier depletion region in [Bi.sub.2][S.sub.3] nanoplates [12].
"Next to enhancement-mode power device switches, imec also provides lateral Schottky diodes for power switching applications.
Vishay High-Current Density Surface Mount TMBS eSMP Rectifiers are ideal for automated placement and feature Trench MOS Schottky technology (TMBS).
The topics include GaAs devices, phase diagrams and crystal growth of compound semiconductors, plasma processing and dry etching, Schottky diodes and field-effect transistor processing, backend processing and through-wafer vias, and radio frequency microelectromechanical systems.
Good-Ark Semiconductor announced the launch of DB520, a 5 A/200 V Schottky bridge rectifier in the DFS package.
But due to the fragile nature of the HgCdTe material, p HgCdTe is not easy to form Ohmic contacts with metal, and it is even possible to form a Schottky contact [5, 6].