field-effect transistor

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field-effect transistor

n
(Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate. Abbreviation: FET See also JFET, IGFET
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Noun1.field-effect transistor - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
References in periodicals archive ?
using the 22nm, 3-D tri-gate transistor technology, making them the first
Intel said that the Tri-Gate transistor moves away from the current "planar" (flat) design, and instead is designed using a three-dimensional architecture, which increases the surface area of the transistor gate, thus increasing performance and enabling higher speed processors.
com)-- Based on an innovative tri-gate transistor design and 22 nm process technology, the new 3rd-Generation Intel[R] Core[TM] processor architecture offers an integrated graphics engine with improved performance along with high speed data I/O for enhanced real-time applications.
Taking advantage of the company's innovative 22nm tri-gate transistor manufacturing technology, Intel engineers have delivered significant improvements in performance for 3rd generation Intel core processors with up to 22 percent faster performance on multithreaded applications compared to 2nd generation Intel CoreTM processors.
htm" target="_blank">3D Tri-Gate transistor technology</a>.
So what exactly does Intel mean by the 3D Tri-Gate transistor.
The partnership will enable Netronome to offer the first flow processors based on Intel's market defining 3-D Tri-Gate transistor technology.
8220;The 3rd generation Intel[R] Core[TM] i7 and Core[TM] i5 processors deliver an incredible performance breakthrough by utilizing a new 22nm process technology and 3D Tri-Gate transistor architecture resulting in lower power requirements, better cooling and increased performance,” said Arun Subbarao the VP of Engineering for LynuxWorks, Inc.
The Tri-Gate transistor is the result of a project started in 2002.
Accelerates Intel's "Tick-Tock" cadence for first time to simultaneously bring to market the world's first processors developed on 22nm manufacturing process using innovative 3-D tri-gate transistor technology and a new graphics architecture.
Cutting-edge manufacturing process features Intel's 3-D Tri-Gate Transistor
Based on Intel s 14 nm 3D Tri-Gate transistor technology, Stratix 10 FPGAs and SoCs are designed to enable the highest performance, most power-efficient applications in the communications, military, broadcast and compute and storage markets.

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