antimonide


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antimonide

(ˈæntɪməˌnaɪd)
n
a compound of antimony
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Moreover, Fujitsu Laboratories has strengthened the resistance against thermal noise of the electron collection layer that connects to the absorption layer, which consists of alternate layers of semiconducting thin films of indium arsenide (InAs) and gallium antimonide (GaSb).
There is less experience in the community with Ga(As)Sb (so-called antimonide) QD on GaAs substrate, but even in this regard quite a number of papers have been published (e.g., [4, 6-20]).
Kane, "Band structure of indium antimonide," Journal of Physics and Chemistry of Solids, vol.
As a member of the III-V compound semiconductors family, the growth of ultrathin films of indium antimonide has attracted a great deal of attention for its use in mid-wavelength infrared detectors (viz., thermal imaging cameras and forward looking infrared systems), magnetic sensors, magneto-resistors, field-effect transistors, photoconductors, and high-speed electronic devices [1-33].
The new technology that the Centre is investigating is based on semiconductor superlattices made from tailored combinations of materials such as Iridium Arsenide (INAS), Gallium Antimonide (GASB) and Aluminium Antimonide (AlSB), it avoids the problems commonly encountered when trying to make three-colour IR detectors by integrating multi-colour functionality into each and every detector element: "The first major obstacle is the choice of material systems that have the ability to perform over a broad range of infrared spectrum," according to the Northwestern team of Anh Minh Hoang, Arash Dehzangi, Sourav Adhikary and Manijeh Razeghi.
One is the SC6800 (Flir systems), which is equipped with a Indium Antimonide InSb MW detector, working in the 3-5 pm infrared band, spatial resolution 640 x 512 pixels full frame, frame rate 565 Hz full frame and higher with a windowing option; images are acquired at frame rate of 960 Hz.
[22] developed a dual wavelength infrared diagnostic for cylinder head surface temperature of an optical engine using an indium antimonide infrared detector.
The spectral range of the sensor is dependent on the FPA technology: silicon (300 tol.100 nm), indium gallium arsenide (InGaAs) (700 to 1,700 nm), indium antimonide (InSb) (1,000 to 5,000 nm) and mercury cadmium telluride (MCT) (1,000 to 1,4000 nm).
In this study, the structural, morphological and electrical properties of aluminium antimonide (AlSb) samples irradiated with 500,1000,1500,2000 shots of GAMKrF Excimer laser (248 nm, 25 mJ, 20 ns) under vacuum ~ 10-5torr were investigated.
Experimenters used indium antimonide nanowires to create a transistor-like device that could transform the electrons from a current applied to it into holes--literally empty spaces left when electrons are taken out.
His solution was to take a piece of the semiconductor indium antimonide and shape it into a lopsided tuning fork.
No one had reported credible evidence that they existed until 2012, when Leo Kouwenhoven at Delft University of Technology in the Netherlands, who had gotten funding and guidance from Microsoft, announced that he had found them inside nanowires made from the semiconductor indium antimonide. He had coaxed the right kind of electron liquid into existence by connecting the nanowire to a chunk of superconducting electrode at one end and an ordinary one at the other.