bandgap


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Related to bandgap: Photonic bandgap

band·gap

 (bănd′găp′)
n.
The difference in energy between electron orbitals in which the electrons are not free to move (called valence bands) and orbitals in which they are relatively free and can carry a current (called conduction bands).
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Design methods of low-voltage curvature-orrected bipolar bandgap references based on the sum of base-emitter voltages, VII Workshop Iberchip, Montevideo, Uruguay, 2123 Marzo, 2001.
The second part of this article reviews the potential applications of electromagnetic bandgap (EBG) structures in enhancing the performance of waveguides and antennas.
The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS) and bipolar power semiconductors for operation up to 2.4 GHz, as well as wide bandgap semiconductor RF power devices.
In addition to the digital logic, these devices can incorporate high-voltage circuitry such as motor controller drives, DC/DC converters, and high-precision analog circuits including bandgap filters, ADCs and DACs.
Normally, electroluminescent materials emit light of a fixed color, determined by the energy of the excited state (bandgap) of the material.
To dislodge an electron, a photon must possess at least a minimum energy known as its bandgap, which is characteristic of a semiconductor.
"Bandgap" refers to the difference between the valence and conduction bands.
The advent of Silicon-Germanium offers numerous interesting possibilities involving heterostructures since the alloy has a smaller bandgap compared with silicon.
As previously reported, JMP Securities analyst Joseph Osha upgraded Cree to Outperform from Market Perform after attending the Applied Power Electronics Conference, which he said underscored the extent to which wide bandgap materials are becoming the default solution in high-voltage power electronics.
The development of the typical semiconductor-laser scheme emitting at thz frequencies has been seriously hampered by the absence of an appropriate material with a sufficiently small bandgap. The leon project addresses this technological and scientific blocking point with new semiconductor-laser schemes for thz emission centered on the integration of graphene-based materials.
speculated that the increase in the concentration of Y doping in the SnO [6], the deterioration of crystallinity, and the increase in optical bandgap of SnO have been observed.
Wide bandgap oxide-based semiconductors are strategical materials for high-power electronics, transparent electrodes, and chemical gas sensors.