bipolar transistor


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Related to bipolar transistor: Field effect transistor, unipolar transistor

bipolar transistor

n.
A type of transistor used to amplify or switch electrical signals and consisting of three semiconductor layers treated so that the layer in the middle has an inherent electric charge opposite to the charge of the layers on either side of it. Signals applied to the middle layer control the strength of current flow between the outside layers.
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The transducer of a magnetic field consisting of two-collector magneticsensitive transistor, field two-gate transistor and bipolar transistor with a phase-shifting circuit R3C1 is designed which establish the auto generating device, the generation frequency of which depends on the induction of a magnetic field [4].
Recently, bipolar-CMOS (BiCMOS) process has become more popular than a pure bipolar process since it contains both high-performance bipolar transistors for analog design and CMOS components for digital design.
Sweet (electrical engineering, Santa Clara University) explains bipolar transistor radio frequency integrated circuit (RFIC) design, covering a wide range of circuit topologies that are optimized for maximum performance with HBT bipolar devices.
The transistor laser was built on Feng's earlier research on heterojunction bipolar transistors which produced the world's fastest bipolar transistor, operating at a frequency of 600 GHz or more.
The equivalent SPICE-Gummel/Poon model of the bipolar transistor, accurately simulating both its DC and high frequency behavior up to the transition frequency [f.
The new products will offer faster switching and reduction of input current than current bipolar transistor arrays and contribute to improved power efficiency.
At the beginning of the wireless era, the available technologies were Si bipolar CMOS, Si bipolar transistor and GaAs MESFET.
Progress toward silicon-germanium optical devices has been slower, but researchers like Soref are encouraged by the success of the heterostructure bipolar transistor.
The Inverpower DC (direct current) power delivery systems using power transistor (Insulated Gate Bipolar Transistor or "IGBT") technology was introduced in the late 1990's and is obtaining increasing acceptance in industrial markets.
NASDAQ: KOPN), the world's leading provider of heterojunction bipolar transistor (HBT) wafers for cellular phones and mobile communications devices, today announced that Kopin and AIXTRON AG (NASDAQ: AIXG) have completed a new multi-year purchase and supply agreement for AIXTRON's latest high-volume MOCVD (metal organic chemical vapor deposition) systems.
NASDAQ: KOPN), the world's leading provider of heterojunction bipolar transistor (HBT) wafers for cellular phones and other communications devices, today announced that Kopin and Skyworks Solutions, Inc.