conduction band


Also found in: Acronyms, Encyclopedia, Wikipedia.
Related to conduction band: Fermi level

conduction band

n.
The set of electron orbitals, generally the outermost shells of the atoms in a conductor or semiconductor, in which electrons are free to move and thereby carry an electric current.
American Heritage® Dictionary of the English Language, Fifth Edition. Copyright © 2016 by Houghton Mifflin Harcourt Publishing Company. Published by Houghton Mifflin Harcourt Publishing Company. All rights reserved.

conduction band

n
(General Physics) See energy band
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
References in periodicals archive ?
In order to study the energy spectrum of shallow donor confined in volcano-shaped InAs/GaAs QR, taking into account strong nonparabolicity of the InAs conduction band, we use below a simple version of the Kane model, proposed in [23, 24].
The energy level above the Fermi surface (0 eV) is the conduction band, and the energy level below the Fermi surface is the valence band.
From this state, the electron is injected into the conduction band of the semiconductor oxide, generating a dye cation ([S.sup.+]).
Furthermore, the superoxide anions are also formed by the molecular reduction of O2, which may take place by the presence of electrons in the conduction band at the surface of the photocatalyst (4).
In Figure 3, a sharp increase in the absorption at 2.72.8 eV is observed in the absorption spectrum of the sample doped with boron, which is associated with transitions from the boron levels to the conduction band. A sharp yield to saturation indirectly confirms our data obtained by electrophysical measurements on a significant boron concentration up to 1020 [cm.sup.-3] [18].
As shown in Figure 1, when a photon with adequate energy (>bandgap energy of semiconductor) is absorbed by the semiconductor, an electron from valence band (VB) gets excited and jumps to the conduction band (CB), which generates a hole in the valence band.
where [K.sub.b] is Boltzmann's constant, T is temperature, [N.sub.c] is effective density of states (DOS) for electrons in conduction band, [N.sub.v] is effective density of states (DOS) for holes in valence band, and [E.sub.F], [E.sub.c,eff], and [E.sub.v,eff] represent fermi level, conduction band edge, and valence band edge, respectively.
Alternatively, metal decoration of Ti[O.sub.2] photoanodes by tailoring photoanode properties, redistributing defects, and trapping levels in the band gap enables changing the conduction band position [13-15].
where the integral is over the unit cell, summation over all initial valence band and conduction band states of allowed ones, and [M.sub.if] is the momentum matrix elements for interband transitions.
However, if there are many of these sub-band gap states, the electrons in the conduction band can move slowly back down to the valence band.
(27) [Fe.sup.3+] impurity level formed under the conduction band (CB) induces the high photocatalytic activities of iron-doped Ti[O.sub.2].
Examining the states at valence band edge, the orbital contributions are mainly from the 2p orbitals on the nitrogen atoms, while the conduction band is narrow with contributions mainly from 4p orbitals on the gallium atoms.