The reverse saturation current is due to the minority carriers at the depletion layer
edge and at the i region by thermal excitation.
This is because when dv/dt was increased, more current was shifted from the MOS channel to expand the depletion layer
. When load current was small, the MOS channel current became small.
At very high electric field (~[10.sup.5] to [10.sup.6] V/cm), some electrons within the diffusion distance near the depletion layer
gain enough energy to create the secondary electronhole pair by raising the electron from the valence band into the conduction band.
Since the n-type doping level ([N.sub.d] donors' concentration is [10.sup.17] [cm.sup.-3]) of the channel is designed to be larger than the p-type substrate (Na acceptors' concentration is [10.sup.15] [cm.sup.-3]), the thickness of the depletion layer
in the n-type area is narrower than the depletion layer
in the p-type region.
The appropriate restrictions in (1) have been imposed via the time varying boundary conditions at the depletion layer
The [[phi].sub.S] values were then applied as input data in the calculations of the surface total coverage with oxygen ions, coverage with various oxygen ions, and thus carrier concentration in-depth profile in the depletion layer
The idea of it detected ability depended on the developing of internal voltage within the depletion layer
which used to separate the electron-hole pair resulting from the absorption of the light energy incident on the device surface .
We can suppose that the electric field, outside the depletion layer
of the n+-p junction, is equal to zero.
The effective surface field ([E.sub.eff]) and effective channel mobility ([[mu].sub.eff]) can be expressed as [E.sub.eff] = (0.5 [Q.sub.inv] + [Q.sub.B])/[[epsilon].sub.Si] and [mu] = ([I.sub.DS]/VDS)(L/W)/[Q.sub.inv], respectively, where [Q.sub.inv] is the inversion layer charge, [Q.sub.B] is the bulk depletion layer
charge, and [[epsilon].sub.Si] is the dielectric constant of Si.
6 Metal gate technology: Technology that incorporates metal to suppress the spread of the depletion layer
appearing at the boundary with the gate insulating layer - an issue that is prevalent when typical polysilicon is used, and to increase channel electrons (or "holes").
The GaAs MESFET is basically a conduction channel where effective transversal characteristics are controlled by a depletion layer
, resulting from the gate-channel junction reverse bias.
As the physisorbed layer is not very stable, physically adsorbed water molecules can locally regroup and change the width of the depletion layer
and height of Schottky barrier, which may explain the resistive switching at RHs above 60% (Figures 3 and 4).