Li et al., "Electrospun bismuth ferrite nanofibers for potential applications in ferroelectric
photovoltaic devices," ACS Applied Materials & Interfaces, vol.
The (1-x)PNN-xPT solid solutions of the Pb([Ni.sub.1/3][Nb.sub.2/3])[O.sub.3] (PNN) relaxor and ferroelectric
PbTi[O.sub.3] (PT) are a noteworthy example [1-4].
Due to favourable combination of piezoelectric properties and coefficients of electromechanical coupling, the ferroelectric
ceramics of lead zirconate titanate family (PZT) is the main functional material for the production of microelectromechanical systems (MEMS) [1-3].
The conventional SBN ferroelectric
thin films are usually crystallized at the temperature of about 700~800[degrees]C and the SBN nanocrystals can be synthesized at the temperature of about 1100[degrees]C [14-16].
Devices & Piezoelectric Actuators: Research Misconceptions and Rectifications
But Kakekhani and Sohrab Ismail-Beigi, also at Yale, identified a way to use ferroelectric
oxides to catalytically separate hydrogen from oxygen more effectively.
The approach has been used in ferroelectric
materials, but could also have applications in ferroelastics, solid protonic acids and materials known as relaxors.
However, the ability to provide these materials with ferroelectric
properties is limited.
Bismuth iron oxide (BiFeO3) belongs to the class of multiferroic materials that exhibit the simultaneous presence of ferromagnetic and ferroelectric
properties at room temperature.
Their potential to be used as high permittivity dielectrics [1-6], organic ferroelectric
memory devices [7, 8], electrostrictive actuators [9-12], and high energy density capacitors [13-20] has been widely studied over the last few decades.
Monte Carlo Simulation of Ferroelectric
Behavior in PZT Films by Using a Stress Dependent DIFFOUR Hamiltonian
Yokohama, Japan, Apr 8, 2014 - (JCN Newswire) - Employees of Fujitsu Semiconductor Limited have received "Prize for Science and Technology (Development Category)" of "Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology", on their work for the "Development of the Volume Production Technology for High Density Ferroelectric
Random Access Memory".