field effect transistor


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Related to field effect transistor: Junction Field Effect Transistor

field effect transistor

n. Abbr. FET
A transistor in which the output current is controlled by a variable electric field.
References in periodicals archive ?
Many field effect transistor (FET)-based photodetectors functioning in the visible-infrared region have recently been reported.
This indicates that the linearization of the field effect transistor proposed in [4] does not work properly.
Unlike standard transistors, which are like driving a car over a hill, the tunneling field effect transistor is more like tunneling through a hill, said Sean Rommel, associate professor of electrical and microelectronic engineering.
Gaggero-Sager, "Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure," Phys.
Incorporating GaAs bipolar field effect transistor (BiFET) technology, the power amplifiers achieve power added efficiency (PAE) of 45 percent at maximum output power of 670mW.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced a 30V Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with the world s lowest RDS(on) for high current automotive applications.
Ideal diode circuits permit today's designer to replace silicon diodes with a low resistance N-Channel field effect transistor (N-FET).
Tokyo, Japan, Sept 12, 2005 - (JCN Newswire) - Toshiba Corporation (TSE: 6502) today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications.
Durafet III is a solid state pH electrode based on Honeywell's well-proven ISFET (Ion Selective Field Effect Transistor) technology.
Durafet III is a solid-state pH electrode, based on Honeywell's Ion Selective Field Effect Transistor technology.
According to TMHU, each new lift truck, as with the company's existing line of electric walkie stackers, is engineered with metal oxide semiconductor field effect transistor (MOSFET) controller system and separately excited motor (SEM) drive technologies, "resulting in increased battery efficiency, stepless acceleration and improved operator control."
Combining both a metal-oxide semiconductor field effect transistor (MOSFET) and a gate turn-off thyristor (GTO), this product can be easily integrated in series and parallel connections.

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