majority carrier


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majority carrier

n
(Electronics) the entity responsible for carrying the greater part of the current in a semiconductor. In n-type semiconductors the majority carriers are electrons; in p-type semiconductors they are positively charged holes. Compare minority carrier
References in periodicals archive ?
In addition to Southwest's new service, traffic is also buoyed by ongoing upgrading of aircraft by majority carrier Hawaiian Airlines; and new service from low cost carriers (Air Asia X, Sun Country, Scoot Airlines) as well as traditional carriers (Alaska adding Sacramento service, Hawaiian adding Portland service, among others).
Because copper oxide is well known as a p-type semiconductor, the majority carrier is hole and the minority carrier is electron.
For GaInP in the CGB region, [B.sub.rad] is assumed constant over molar fraction based on data for [Ga.sup.0.51] [In.sup.0.49]P [32] since the CGB region is a majority carrier region, and thus the recombination in these layers is not relevant to device performance.
Port Hedland noted its largest shipment, breaking an earlier iron ore export record as a majority carrier PSU transported 255,000 tonnes of iron ore to China.
The injection level is ratio of excess minority carrier concentration to equilibrium majority carrier concentration [1]-[3].
At this point, the number of holes (minority carriers) at the surface is larger than the number of the electrons (majority carrier), and thermionic emission of electrons is recombined by holes.
In terms of a four-band model for room temperature n-type GaSb, the total density of states [[rho].sub.c](E) for the majority carrier electrons in n-type GaSb then becomes
Characterization: A number of techniques have been developed for the systematic study of the effect of the nature and density of dopants on properties such as minority carrier diffusion length, conductivity, |4,5~ photoconductivity, |4,8~ majority carrier density and mobility.
Unlike transistors, however, silicon pressure sensors are majority carrier devices, which means they rely on the one of two charge carriers - electron or hole - that is more prevalent in a material.
Because the SIT is a majority carrier device, its speed is not limited by minority carrier stored charge as is the case in the BJT.
Majority carrier removal and decreases in carrier mobility cause increases in forward collector-emitter voltage.