memory cell


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memory cell

n.
A B cell or T cell that has developed during an initial immune response to an antigen and can be quickly activated upon subsequent exposure to the same antigen.

mem′ory cell`


n.
a long-lived cell of the immune system that has previously encountered a specific antigen and that upon reexposure produces large amounts of antibody (memory B cell) or rapidly initiates cell-mediated immunity (memory T cell).
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It uses a stacked architecture to arrange the memory cells within an SSD, instead of the planar or flat arrangement in past implementations.
T effector memory cells which are implicated in many T cell mediated autoimmune disorders, including rheumatoid arthritis, lupus and multiple sclerosis.
[t.sub.c] is the information input to the memory cell, and c includes cell activation vectors, and m is the information the memory cell outputs.
In section III, we make use of the proposed model to quantitatively analyse the Platinum electrodes-Titanium Dioxide (Pt-Ti[O.sub.2]-Pt) memristor device in a multi-bit memristor memory cell. Also we simulate the writing and reading processes of 3 -bits memory cell.
(2) Adoption of memory cell optimal for dual-ported SRAM, achieving the industry-leading integration density of 3.6 Mbit/mm[sup.2]
In the most common form of computer memory dynamic random access memory (DRAM) a transistor and a capacitor are paired to create a memory cell which represents a single bit of data.
If an antibody recognizes an antigen, the antibody memory cell turns into (B cell).
This analysis is the result of the idea of the construction of a new type of the memory cell in the form of a transistor with two gates, which, besides the normal gate with a galvanic contact, also has an isolated inner gate.
Technological scaling of charge storage NVM has unveiled many critical reliability issues related to device characteristics, for example, charge loss (CL), charge gain (CG), and random telegraph noise (RTN) exhibited through threshold voltage ([V.sub.t]) shift and broadening of memory cell, neighboring bit interference (i.e., disturb phenomenon), cell-to-cell coupling interferences, and severe short channel effects.
A blood specimen was also sent to LabPlus Auckland for B-cell memory cell studies.
<p>The structure of a typical non-volatile memory cell includes a storage element combined with a selector element.
This innovative new technology holds four bits of data in each memory cell, twice as many as the cells in conventional multi-level cell (MLC) NAND (2-bits-per-cell) memory chips.