A PIN diode is a wide un-doped intrinsic semiconductor sandwiched between a p-type and n-type semiconductor
. Both the p-type and n-type semiconductors
are heavily doped.
(1) p-n junction region Refers to the part of a semiconductor where the p-type semiconductor area and the n-type semiconductor
Band structure of n-type semiconductor
system, metal with a Schottky barrier: (b) at high temperatures; (c) at low temperatures.
On the TCO, a (compact) blocking titanium oxide (Ti[O.sub.2.sup.b]) layer is deposited; on the latter, a mesoporous titanium oxide (Ti[O.sub.2.sup.m]) layer is grown as an n-type semiconductor
Sn[O.sub.2] is generally an n-type semiconductor
due to the existence of intrinsic defects such as oxygen deficiencies and tin interstitials; but, SnO exhibits p-type conductivity and relatively high hole mobility originated from the tin vacancy.
In the system used in the present study, which is calibrated using well-known n-type and p-type silicon, negative PEC signal indicates an n-type semiconductor
while positive PEC signal indicates a p-type semiconductor as a result of different directions of band bending in each case.
Tin Oxide (Sn[O.sub.2]) is a n-type semiconductor
with wide energy band gap (3.7 eV).
Caption: Figure 2.(a),(b) Electrostatic potential, (c) electron concentration, (d) and hole concentration in an n-type semiconductor
at a bias voltage of V=-0.25V.
Sn[O.sub.2] is an n-type semiconductor
that has a wide band gap (3.6 eV at 300 K) so that it can be utilized in a variety of technologies [31-35].
ZnO is a direct band gap compound semiconductor belonging to II-VI group having room temperature band gap energy of 3.37 eV.ZnO possesses stable wurtzite structure having a = 0.325 nm and c= 0.521nm.ZnO is an intrinsic n-type semiconductor
possessing wurtzite structure with hexagonal unit cell belonging to C4 space group .
where [[epsilon].sup.sn.sub.k] is the n-type semiconductor
dielectric constant; [[omega].sub.p] is the angular plasma frequency; [omega] = 2[pi]f is the angular frequency; f is the frequency of EM microwaves; [zeta] is the electrons total collision frequency with semiconductor lattice constant.
When we investigate the possible current conduction mechanisms in a MPS structure with n-type semiconductor
, we also should consider the density of interface traps (Dit) and their location with respect to the bottom of conduction band.