p-n junction


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p-n junction

n
(Electronics) electronics a boundary between a p-type and n-type semiconductor that functions as a rectifier and is used in diodes and junction transistors
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
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Noun1.p-n junction - the junction between a p-type semiconductor and an n-type semiconductor; "a p-n junction has marked rectifying characteristics"
tangency, contact - (electronics) a junction where things (as two electrical conductors) touch or are in physical contact; "they forget to solder the contacts"
Based on WordNet 3.0, Farlex clipart collection. © 2003-2012 Princeton University, Farlex Inc.
References in periodicals archive ?
Among that, silicon nanowires (SiNWs) core-shell solar cells with a p-n junction were reported as promising solutions for energy efficient conversion.
Design and Experimental Results of Physically Contacted p-n Junction. For preparing p-n junction p- and n-type sliced gels were superimposed and a small force was applied on the metal electrode softly to stick the gels together.
This phenomenon takes place when the LED chip is powered, forward bias takes place at the p-n junction of the LED chip.
The p-n junction is still the basic building block of many semiconductor devices.
Heterogeneous electrical property, such as diode p-n junction and rectifying effect, would enable a fibrous material to control the carrier transport, which creates opportunities to develop novel multifunctional nanofibrous materials and devices.
In the gallium nitride LEDs, the researchers used the local piezoelectric potential to tune the charge transport at the p-n junction.
P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.
The process creates a boundary called a p-n junction inside the device.
where S is the effective area of TEG (here, it is 6.25 [mm.sup.2]), a is the base side length of TE prism, and d is the spacing between p-type prism and n-type prism of a TE p-n junction, as shown in Figure 3.
To create a p-n junction diode, the researchers work with materials at 55,000 times atmospheric pressure and at temperatures close to 1,700|C.
Previously, the photovoltaic effect was reported in the perovskite-based p-n junctions, thin films, and single crystals [1-6].