random access memory


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Related to random access memory: Read only memory, motherboard, cache memory

random access memory

n
(Computer Science) See RAM1
ThesaurusAntonymsRelated WordsSynonymsLegend:
Noun1.random access memory - the most common computer memory which can be used by programs to perform necessary tasks while the computer is onrandom access memory - the most common computer memory which can be used by programs to perform necessary tasks while the computer is on; an integrated circuit memory chip allows information to be stored or accessed in any order and all storage locations are equally accessible
buffer storage, buffer store, buffer - (computer science) a part of RAM used for temporary storage of data that is waiting to be sent to a device; used to compensate for differences in the rate of flow of data between components of a computer system
magnetic core, core - (computer science) a tiny ferrite toroid formerly used in a random access memory to store one bit of data; now superseded by semiconductor memories; "each core has three wires passing through it, providing the means to select and detect the contents of each bit"
core memory, magnetic core memory - (computer science) a computer memory consisting of an array of magnetic cores; now superseded by semiconductor memories
RAM disk - (computer science) a virtual drive that is created by setting aside part of the random-access memory to use as if it were a group of sectors; "access to a RAM disk is very fast but the data it contains is lost when the system is turned off"
volatile storage - computer storage that is erased when the power is turned off
Translations

random access memory

n (Comput) → Direktzugriffsspeicher m
References in periodicals archive ?
Korea's Samsung Electronics Co Ltd has completed the development of a new Rambus dynamic random access memory (DRAM) device which the company claims will cost at least 20% less than other similar products.
Korean dynamic random access memory (DRAM) manufacturers are expected to resume investment in new plants and manufacturing lines this year.
Elpida Memory Inc, a Tokyo-based joint venture between NEC Corp and Hitachi Ltd for the production of dynamic random access memory (DRAM) devices, is to construct a 300mm wafer plant.
Fujitsu Ltd is to collaborate with Toshiba Corp on the development of high speed memory chips called fast-cycle random access memory (FCRAM).
Samsung Electronics Co Ltd has started mass production of Rambus dynamic random access memory (DRAM) chips.
A tie-up with Hyundai would give Intel a steady source for memory production, especially the direct rambus-dynamic random access memory (DR-DRAM), which both companies are strongly backing (CI No 3,552).
Samsung has developed a new high-density Ferroelectric Random Access Memory (FRAM) device using 1T/1C and COB technology.
The AlterAltos 11000 is aimed at departmental level use and has dual 450MHz Pentium II chips and up to 2Gb of 100MHz synchronous dynamic random access memory (SDRAM).
Samsung Electronics Co Ltd says that it has successfully developed the world's first 1Gb DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory).
The worst projected revenue losses for 1998 are expected to be shown by dynamic random access memory (DRAM) manufacturers such as NEC, Toshiba, Hitachi and Samsung.
Two of Japan's major chip makers, Toshiba Corp and Fujitsu Ltd will collaborate on developing 1Gb dynamic random access memory. The deal will see a team of 100 researchers being assembled at Toshiba's development center to focus on all aspects of developments of the 1Gb DRAM, especially use of 0.13 micron process.
Hyundai Electronics Industries has started commercial production of 128Mb synchronous dynamic random access memory (SDRAM).

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