By employing material such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs), electronics manufacturers have been able to replace traditional thermionic
devices that made electronic items heavy and non-portable.
"plasmionico is an innovative proposal aiming at advancing sustainable energy production by developing a ""cold-cathode"" thermionic
generator as key component of novel photovoltaic/thermoelectric (pv/te) hybrid devices to outperform the solar cell and thermoelectric generator working separately.
The electron source was by Schottky thermionic
Since the relation [W.sub.s] < [W.sub.Me] is satisfied when the metal is in contact with semiconductor, current of thermionic
emission from semiconductor surface is greater than from metal surface.
However, the proposed LT-SWH system has no corrosion and freezing problems during winter, and it has low heat loss at night due to the peculiarity of thermionic
diode of LT.
emission has a time delay which is not conducive to the improvement of the temporal resolution.
field emission theory based model for metal (M)-semiconductor (S)-metal (M) system with two corresponding Schottky barriers at M/S interface was used to approximate the obtained nonlinear IVCs for [Bi.sub.2][S.sub.3] nanowires (detailed process in [21, 22]).
These electrons in EL arise because of the phenomenon of their thermionic
emission from the surface of a metal cathode heated by direct (alternating) heating current to high temperature (about (800-3000)[degrees]C) [2, 5].
No matter what your scientific persuasion, when you consider that less than a single human lifespan ago, the first digital computers were developed and utilized the physics of thermionic
electron flows through a vacuum, you must admit a lot has changed in a very short amount of time.
(1.1) has been subject of many studies in the literature such as the theory of stellar structure, thermionic
currents and isothermal gas spheres .
The conduction mechanisms initially considered for modeling these gate tunneling currents were Ohmic Conduction (OC), Thermionic
Emission (TE), Space-Charge Limited Current (SCLC), Trap-Assisted Tunneling (TAT), Poole-Frenkel (PF), and Fowler-Nordheim (FN).
Following the previous investigation [8, 10], the I-V characteristics of the forward bias current were analyzed in accordance with the Richardson-Schottky model that assumes direct current electrical conduction through electric field assisted thermionic