A great advantage is that plasmon-resonance driven thermionic emission
is not restricted to a particular class of materials, working for si-based devices as well as for organic (soft and flexible) materials, since the cathode temperature is that of a working solar cell.
Since the relation [W.sub.s] < [W.sub.Me] is satisfied when the metal is in contact with semiconductor, current of thermionic emission
from semiconductor surface is greater than from metal surface.
where [v.sub.e,th] is the thermal velocity of electrons, [mathematical expression not reproducible] is the electron stream resulting from thermionic emission
(only on the walls of the penetration channel), and [??] is the surface normal.
Seidl, "Thermionic emission
of alkali ions from zeolites," Journal of Applied Physics, vol.
In the literature, most studies consider the thermionic emission
as dominant current conduction mechanism and obtain structures' electrical parameters on this basis .
At an atomic level, the heated filament (cathode) is heated to a high enough temperature such that electrons are "boiled off" the surface through a process called thermionic emission
. The negatively charged electrons are collected and guided by a high voltage electric field pointed towards the anode (Charles Sturt University, 2002).
The Schottky barrier high and ideality factors of the Ni/Au contact onto the untreated ZnO layer were 0.59 eV and 2.01, respectively, indicating that the preetching process still was insufficient for idealizing the Schottky contact property and multiple current pathways still existed in addition to thermionic emission
. By contrast, the low reverse leakage current of the Ni/Au contact to the surface-treated ZnO layer led to a high current ratio of about [10.sup.7], which also corresponded to a Schottky barrier height of approximately 0.9 eV, a value close to the ideal value (~0.85 eV), revealing that thermionic emission
predominated the current transition.
When a metal/semiconductor contact with a thin interfacial layer is considered, it is assumed that the forward bias current of the device is due to thermionic emission
current, and it may be expressed as