valence band


Also found in: Acronyms, Encyclopedia, Wikipedia.
Related to valence band: Fermi level

valence band

n.
The outermost electron shell of atoms in an insulator or semiconductor in which the electrons are too tightly bound to the atom to carry electric current.
American Heritage® Dictionary of the English Language, Fifth Edition. Copyright © 2016 by Houghton Mifflin Harcourt Publishing Company. Published by Houghton Mifflin Harcourt Publishing Company. All rights reserved.

valence band

n
(General Physics) See energy band
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
References in periodicals archive ?
The subscripts of C and V are the conduction band and valence band, respectively.
At normal pressure, the single valence band, which is positioned at the bottom of the valence band arise from 2[s.sup.2] electrons of O.
The reaction is initiated by the excitation of valence band electrons and photo injection of photocatalyst in presence UV light [10].
V is the matrix element describing the coupling between the host valence band and the Bi related impurity level and [C.sub.Bi] is the coupling parameter which is used as a fitting parameter in our model [10].
In the amorphous semiconductor materials, the optical transition is from the valence-band tail states to the conduction band and from the extended states in the valence band to the conduction-band tail states (14).
[8] showed that the AIK[beta] emission (3p-1s transition) from alumina crystals is accompanied by a small high energy weak emission peak located 0.6 eV above the top of the valence band.
In the presence of a magnetic field parallel to the z direction, the energies of electrons and holes in the conduction bands and valence bands are as follows:
Under (0001) plane strain, the lattice constant strain of bulk [Fe.sub.2]Si changes its band structure, which leads to an energy change of the conduction band bottom and the valence band top.
Interstitial sulfur states should be located closer to the valence band edge than interstitial zinc states to the conduction band edge while sulfur vacancies should be located closer to the conduction band edge than zinc vacancies to the valence band edge.
In AlN, the metallization occurs through indirect closing of the band gap between valence band maximum at [GAMMA] point and conduction band minimum at X point.
W[O.sub.3] film exhibits a broad range of functional properties, such as small band gap energy (2.4-2.8eV), deeper valence band (+3.1 eV), stable physicochemical properties, and strong photocorrosion stability in aqueous solution [410].